Optical Properties of Free Electrons in ZnO
- 9 December 1966
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 152 (2) , 736-739
- https://doi.org/10.1103/physrev.152.736
Abstract
The optical properties of indium-doped ZnO crystals, with free-carrier concentrations ranging from to 5× , have been studied at room temperature. The condition of the crystal surfaces has been shown to influence radically the reflectivity in the near infrared. The optical effective mass for free electrons has been calculated from the dispersion in the near infrared to be , which is in close agreement with other determinations. Experiments with polarized radiation revealed no measurable anisotropy of effective mass. The "polaron" effective mass in ZnO is estimated and briefly discussed.
Keywords
This publication has 12 references indexed in Scilit:
- The exciton spectrum of zinc oxidePublished by Elsevier ,2002
- Raman Effect in Zinc OxidePhysical Review B, 1966
- Measurement of the Refractive Indices of Several CrystalsJournal of Applied Physics, 1965
- Piezoelectric Scattering and Phonon Drag in ZnO and CdSJournal of Applied Physics, 1961
- Excitons and the Absorption Edge of ZnOJournal of Applied Physics, 1961
- Infrared reflectivity of zinc oxideJournal of Physics and Chemistry of Solids, 1959
- Infrared absorption in zinc oxide crystalsJournal of Physics and Chemistry of Solids, 1959
- The diffusion and precipitation of Indium in Zinc OxideJournal of Physics and Chemistry of Solids, 1959
- Hall Effect Studies of Doped Zinc Oxide Single CrystalsPhysical Review B, 1957
- Determination of Optical Constants and Carrier Effective Mass of SemiconductorsPhysical Review B, 1957