Dose-Rate Effects in the Permanent Threshold Voltage Shifts of MOS Transistors
- 1 January 1975
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 22 (6) , 2214-2218
- https://doi.org/10.1109/tns.1975.4328108
Abstract
Data has been collected that shows the permanent threshold voltage shift occurring in MOS transistors exposed to the same total dose of gamma radiation can be greater in a high dose-rate environment than in a low dose-rate environment. This dose-rate effect is ascribed to a "Photovoltaic" bias generation in the substrate of a device which results in an effective gate bias change (positive for P-channel and negative for N-channel transistors). The bias change ranges from 0 to ±1 volt during the radiation burst. Thus, in a high dose-rate ionizing environment, the permanent gate threshold voltage shift of an MOS device, which is known to be a function of the gate bias during irradiation, will exhibit an indirect dose-rate dependence which is caused by an internal change in instantaneous gate bias.Keywords
This publication has 3 references indexed in Scilit:
- Radiation-induced space-charge buildup in MOS structuresIEEE Transactions on Electron Devices, 1967
- Influence of surface conditions on silicon planar transistor current gainSolid-State Electronics, 1967
- A high field triodeSolid-State Electronics, 1965