Segregation of dopants in melt-grown indium selenide crystals
- 15 August 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (4) , 978-982
- https://doi.org/10.1063/1.334038
Abstract
We report results of doping experiments of indium monoselenide, InSe, by substitution of the metal or of the chalcogen by different foreign atoms. The difficulty of effective doping is related to the method of crystal growing from a nonstoichiometric melt and to the intrinsic properties of lamellar compounds. An estimate of effective distribution coefficients of Sn, Zn, Ga, and S is given.This publication has 4 references indexed in Scilit:
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- Photoconductivity and photovoltaic effect in indium selenideJournal of Applied Physics, 1983
- Cyclotron resonance studies on bulk and two-dimensional conduction electrons in InSeSolid State Communications, 1982
- Large InSe monocrystals grown from a non-stoichiometric meltJournal of Crystal Growth, 1977