Epitaxial diamond Schottky diode on p+-substrate

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Abstract
Schottky diodes have been fabricated on homeoepitaxial p-doped diamond layers grown on p+-diamond substrates. Two distinctly different configurations were investigated to study the influence of the p+-substrate conductivity and obtain a rectifying characteristic with low ohmic loss. A series resistance of 8(Omega) was obtained at 500 degree(s)C for strong forward bias and a 5 X 10-5 cm2 contact area. Due to the low activation energy of the p+-substrate conductivity the minimum series resistance at R.T was 70(Omega) . To our knowledge, these are the lowest series resistances reported so far for a diamond Schottky diode enabling extremely high current densities of 103 A/cm2 in combination with a current rectification ratio of 105 at +/- 2V.

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