Transient behavior of subthreshold characteristics of fully depleted SOI MOSFETs
- 1 October 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (10) , 518-520
- https://doi.org/10.1109/55.119175
Abstract
It has been found that the subthreshold currents of fully depleted silicon-on-insulator (SOI) MOSFETs show a transient behavior under certain front-gate and back-gate voltage conditions. The cause of this anomaly is explained, and applications for the phenomenon are pointed out. Particularly, a simple way to measure the silicon film thickness is suggested.Keywords
This publication has 4 references indexed in Scilit:
- A CV technique for measuring thin SOI film thicknessIEEE Electron Device Letters, 1991
- Rapid electrical measurements of back oxide and silicon film thickness in an SOI CMOS processIEEE Transactions on Electron Devices, 1991
- Subthreshold slope of thin-film SOI MOSFET'sIEEE Electron Device Letters, 1986
- Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET'sIEEE Transactions on Electron Devices, 1983