High performance GaInAsSb/GaSb p-n photodiodes for the 1.8–2.3 μm wavelength range
- 7 April 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (14) , 903-904
- https://doi.org/10.1063/1.96653
Abstract
GaInAsSb/GaSb p‐n heterojunction photodiodes prepared by liquid phase epitaxy are described. The low net acceptor concentration obtained by Te compensation of the quaternary layer permits a room‐temperature external quantum efficiency of 67±5% to be achieved at a wavelength of 2.2 μm.Keywords
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