Shallow impurities in semiconductor quantum wells

This publication has 19 references indexed in Scilit:

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  Physical Review B, 1985
• Effect of magnetic field on the energy levels of a hydrogenic impurity center in GaAs/${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$${\mathrm{Al}}_{\mathrm{x}}$As quantum-well structures
  Physical Review B, 1985
• Photoluminescence from “spike doped” hydrogenic donors in Al0.3Ga0.7As-GaAs quantum wells
  Surface Science, 1984
• Raman scattering from electrons bound to shallow donors in $\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}-{\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{As}$ quantum-well structures
  Physical Review B, 1984
• Hydrogenic-impurity ground state inGaAs−Ga1−xAlxAsmultiple—quantum-well structures
  Physical Review B, 1983
• Binding energies of wannier excitons in GaAs-Ga1−xAlxAs quantum well structures
  Solid State Communications, 1983
• Energy levels of hydrogenic impurity states in GaAs-Ga1−xAlxAs quantum well structures
  Solid State Communications, 1983
• Energy spectra of donors inGaAs−Ga1−xAlxAsquantum well structures in the effective-mass approximation
  Physical Review B, 1982
• Extrinsic photoluminescence from GaAs quantum wells
  Physical Review B, 1982
• Hydrogenic impurity states in a quantum well: A simple model
  Physical Review B, 1981