Effektive Masse und Beweglichkeit der Löcher in p-ZnSiAs2
- 1 January 1975
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 10 (6) , 673-679
- https://doi.org/10.1002/crat.19750100611
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- Hole Transport in Polar SemiconductorsPhysica Status Solidi (b), 1972
- Elastic Properties of ZnS Structure SemiconductorsPhysical Review B, 1970
- Electrical Properties of n- and p-Type Gallium ArsenideJournal of the Physics Society Japan, 1968
- Electrical Properties of-Type GermaniumPhysical Review B, 1954