Influence of CdCl2Treatment on Structural and Electrical Properties of Highly Efficient 2-µm-Thick CdS/CdTe Thin Film Solar Cells

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Abstract
The structural and electrical properties of the CdS/CdTe(S) interface region of 2-µm-thick CdS/CdTe solar cells have been studied in conjunction with photovoltaic (PV) performances with a focus on the influence of the annealing temperature (TCdCl2) and oxygen concentration of the CdCl2 treatment. When the CdCl2 treatment with the same conditions for a 5-µm-thick solar cell is applied to the 2-µm-thick solar cells, the PV performances largely decrease due to the structural deterioration at the CdS/CdTe(S) interface; however, they are improved by the rapid treatment with high TCdCl2 under a higher oxygen concentration. Similar behaviors are observed between the open-circuit voltage (VOC) and the signal intensity of the electromodulated photoluminescence against TCdCl2 or oxygen concentrations. These results suggest that the n+-CdTe1-xSx layer adjacent to the CdS/CdTe(S) interface plays a crucial role in the increase of VOC because of a decrease in the nonradiative recombination rate at and near the CdS/CdTe(S) interface and/or an increase in the built-in electric field.

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