Reactivation of acceptors and trapping of hydrogen in GaN/InGaN double heterostructures
- 23 September 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (13) , 1879-1881
- https://doi.org/10.1063/1.117464
Abstract
The apparent thermal stability of hydrogen passivated Mg acceptors in GaN is a function of the annealing ambient employed, with H2 leading to a reactivation temperature approximately 150 °C higher than N2. The dissociation of Mg–H complexes and the loss of hydrogen from GaN are sequential processes, with reactivation occurring at ⩽700 °C for annealing under N2, while significant concentrations of hydrogen remain in the crystal even at 900 °C in implanted samples. The hydrogen is gettered to regions of highest defect density such as the InGaN layer in GaN/InGaN double heterostructure.This publication has 0 references indexed in Scilit: