ElectronicgFactors of thep2Configuration in Ge I and Sn I

Electronic $g$ factors have been obtained by the atomic-beam magnetic-resonance technique for all $J\ne 0$ states arising from the $p^2$ electronic configuration in Ge i and Sn i. The results for the ${}_{}{}^1{}_{}{}^{}D_2^{}{}_{}{}^{}$, ${}_{}{}^3{}_{}{}^{}P_2^{}{}_{}{}^{}$, and ${}_{}{}^3{}_{}{}^{}P_1^{}{}_{}{}^{}$ states for Ge are 1.00639(8), 1.49458(9), 1.50111(7); and for Sn they are 1.05230(8), 1.44878(9), and 1.50110(7), respectively. The results are compared with intermediate-coupling calculations.