Interband impact ionization and nonlinear absorption of terahertz radiations in semiconductor heterostructures

Preprint

2 December 2003

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/0312057

Abstract

We have theoretically investigated nonlinear free-carrier absorption of terahertz radiation in InAs/AlSb heterojunctions. By considering multiple photon process and conduction-valence interband impact ionization (II), we have determined the field and frequency dependent absorption rate. It is shown that (i) electron-disorder scatterings are important at low to intermediate field, and (ii) most importantly, the high field absorption is dominated by II processes. Our theory can satisfactorily explain a long standing experimental result on the nonlinear absorption in THz regime.

Keywords

All Related Versions

Version 1, 2003-12-02, ArXiv
Published version: Physical Review Letters, 91 (23), 237401.

This publication has 0 references indexed in Scilit: