In-situ control of Ga(A1)As MBE layers by pyrometric interferometry
- 2 February 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 127 (1-4) , 1010-1013
- https://doi.org/10.1016/0022-0248(93)90778-u
Abstract
No abstract availableThis publication has 1 reference indexed in Scilit:
- Epitaxial growth rate measurements during molecular beam epitaxyJournal of Vacuum Science & Technology B, 1990