Improved techniques for growth of large-area single-crystal Si sheets over SiO2 using lateral epitaxy by seeded solidification
- 1 October 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (7) , 561-563
- https://doi.org/10.1063/1.92794
Abstract
Continuous single‐crystal Si sheets over SiO2 with areas of several square centimeters have been produced from poly‐Si films by the LESS technique (lateral epitaxy by seeded solidification). Seeding is achieved either with a narrow stripe opening in a recessed SiO2 layer on a single‐crystal Si substrate or with an external single‐crystal Si seed. N‐channel metal‐oxide‐semiconductor field‐effect transistors (MOSFET’s) fabricated in these films exhibit surface electron mobilities as high as 700 cm2/V s.Keywords
This publication has 5 references indexed in Scilit:
- Heteroepitaxy of vacuum-evaporated Ge films on single-crystal SiApplied Physics Letters, 1981
- Lateral epitaxy by seeded solidification for growth of single-crystal Si films on insulatorsApplied Physics Letters, 1981
- Seeded and limited seeding regrowth of Si over SiO2 by cw laser annealingApplied Physics Letters, 1981
- Electron Mobility in Inversion and Accumulation Layers on Thermally Oxidized Silicon SurfacesIEEE Journal of Solid-State Circuits, 1980
- Crystallographic orientation of silicon on an amorphous substrate using an artificial surface-relief grating and laser crystallizationApplied Physics Letters, 1979