Diffusion lengths in epitaxial GaAs by angle lapped junction method
- 1 October 1965
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 8 (10) , 807-811
- https://doi.org/10.1016/0038-1101(65)90073-0
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Zur Messung der Diffusionslänge der Minoritätsträger in HalbleiternPhysica Status Solidi (b), 1964