Radiolysis and resolution limits of inorganic halide resists

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Abstract
Patterning at the 1–2 nm size scale has been demonstrated with self-developing metal halide resists using a subnanometer diameter 100 keV electron beam. Electron energy loss spectroscopy during lithographic exposure indicates removal of the halide ion first, followed by displacement of the metal ions. Under appropriate exposure of AlF3, we have demonstrated that aluminum metal structures can be fabricated in situ. Nanometer scale patterns have been replicated into Si3N4 via reactive ion etching using AlF3 as the resist mask.

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