Beryllium-Implanted 6H-SiC P+N Junctions

• 1 February 1998
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 264-268, 1049-1052
• https://doi.org/10.4028/www.scientific.net/msf.264-268.1049

Abstract

Keywords

• BERYLLIUM
• CARRIER LIFETIME
• IMPURITY LEVELS
• ION IMPLANTATION
• SPACE CHARGE LIMITED CURRENT
• SRH-RECOMBINATION