InGaAsP/InP multiquantum-well structure grown by MOCVD

14 February 1985

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 21 (4) , 164-165
https://doi.org/10.1049/el:19850116

Abstract

InGaAsP/InP multiquantum-well (MQW) structures have been successfully grown by low-pressure MOCVD. The abruptness of the As atom profile was measured to be 20 Å by SIMS analysis. Continuous operation of InGaAsP/InP lasers using MQW structure has been achieved at 80 K.

Keywords

III-V SEMICONDUCTORS
MQW STRUCTURE
LOW-PRESSURE MOCVD
80K
SEMICONDUCTOR LASERS
SEMICONDUCTOR SUPERLATTICES
AS ATOM PROFILE
VPE
MULTIQUANTUM-WELL STRUCTURE
SIMS ANALYSIS
INGAASP/INP
CONTINUOUS OPERATION

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