Homoepitaxial VPE Growth of SiC Active Layers

• 1 July 1997
• journal article
• research article
• Published by Wiley in Physica Status Solidi (b)
• Vol. 202  (1) , 263-279
• https://doi.org/10.1002/1521-3951(199707)202:1<263::aid-pssb263>3.0.co;2-y

Abstract

Keywords

• MATERIAL PROPERTIES
• SEMICONDUCTOR DEVICES