Light-emitting organic field-effect transistors using an organic heterostructure inside the transistor channel
- 21 April 2006
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 6192
- https://doi.org/10.1117/12.664399
Abstract
We have realized a light-emitting organic field-effect transistor (LEOFET). Excitons are generated at the interface of an n-type and a p-type organic semiconductor heterostructure inside the transistor channel. The dimensions and the position of the p-n heterostructure are defined by photolithography. The recombination region is several microns from the metal electrodes. Therefore, the exciton quenching probability in this device is reduced. Numerical simulations show that the recombination region can move within the transistor channel by changing the biasing conditions.This publication has 0 references indexed in Scilit: