Mid-infrared In1−xAlxSb/InSb heterostructure diode lasers
- 24 February 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (8) , 931-933
- https://doi.org/10.1063/1.118444
Abstract
Stimulated emission at 5.1 μm was demonstrated from a broad area heterostructure diode laser grown by molecular beam epitaxy. For a 5 μs pulse and a 500 Hz repetition rate the threshold current density was 1480 at 77 K and the maximum operating temperature was 90 K at a current density of 2680 . Maximum peak power output was estimated to be 28 mW per facet at 77 K and 4500 .
Keywords
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