The effect of substrate materials on holding time degradation in MOS dynamic RAM
- 1 July 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 3 (7) , 182-184
- https://doi.org/10.1109/EDL.1982.25530
Abstract
The effect of substrate materials (bulk silicon, p/p+epitaxial silicon, and intrinsic gettering silicon) on the holding time degradation of MOS dynamic RAM cells by excess minority carriers emitted from adjacent MOS devices was studied. It is shown that intrinsic gettering silicon has less susceptibility to holding time degradation than p/p+epitaxial silicon, and much less than bulk silicon. The degradation mechanism is discussed in connection with the substrate materials.Keywords
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