Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layers

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Abstract
Exciton resonance energies of hexagonal (h‐) GaN(0001) epilayers were determined by a combination of high‐resolution modulated photoreflectance methods. The results were analyzed thoretically using the Luttinger‐Kohn type Hamiltonian for the valence bands under the in‐plain biaxial stress, and we obtained the shear deformation potential constants and energy gap in unstrained crystal. Occurrence of the anticrossing of B and C valence bands in tensile biaxially strained h‐GaN was suggested.