Analysis of junction depths and lattice point defect interdiffusion coefficients in Hg0.8Cd0.2Te

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Abstract
A model for the interdiffusion of lattice defects in Hg0.8Cd0.2Te is proposed and applied to experimental results. It is assumed that the electrical properties of state-of-the-art nominally undoped Hg0.8Cd0.2Te are determined by native defects. The model has been used to derive an equation for the junction depth obtained when a Te-rich sample is diffused under Hg-saturation conditions at low temperatures. Calculations using the equation are found to agree with experimental data for junction depth versus excess Te concentration, diffusion time, and temperature.

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