GaInP/AlGaInP strained quantum wells grown using atmospheric pressure organometallic vapor phase epitaxy
- 1 February 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 109 (1-4) , 285-291
- https://doi.org/10.1016/0022-0248(91)90191-7
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
- Characteristic temperature of GaInP/AlGaInP single quantum well lasersElectronics Letters, 1989
- AlGaInP/GaAs red edge-emitting diodes for polymer optical fiber applicationsApplied Physics Letters, 1988
- Polymer optical fibresJournal of Materials Science, 1988
- Stimulated emission in In0.5(AlxGa1−x)0.5P quantum well heterostructuresJournal of Crystal Growth, 1988
- Organometallic vapor phase epitaxial growth of (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P and its heterostructuresIEEE Journal of Quantum Electronics, 1988
- AlGaInP double heterostructure visible-light laser diodes with a GaInP active layer grown by metalorganic vapor phase epitaxyIEEE Journal of Quantum Electronics, 1987
- InGaP/InGaAlP double-heterostructure and multiquantum-well laser diodes grown by molecular-beam epitaxyJournal of Applied Physics, 1987
- MOCVD growth of AlGaInP at atmospheric pressure using triethylmetals and phosphineJournal of Crystal Growth, 1986
- Growth of high-quality inGaAIP epilayers by MOCVD using methyl metalorganics and their application to visible semiconductors lasersJournal of Crystal Growth, 1986
- VPE growth of AlxGa1−xAsJournal of Crystal Growth, 1978