Electron-beam-semiconductor application to laser pulsing
- 1 June 1973
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 9 (6) , 606-607
- https://doi.org/10.1109/JQE.1973.1077558
Abstract
A high-current electron-beam-semiconductor pulse amplifier was used to modulate an injection laser. Results show the capability of infrared output having faster rise time and shorter duration than can be obtained with commonly used types of pulse drivers.Keywords
This publication has 3 references indexed in Scilit:
- Optimum design of electron beam-semiconductor linear low-pass amplifiers—Part I: Bandwidth and rise timeIEEE Transactions on Electron Devices, 1973
- Performance of electron beam-semiconductor amplifiersIEEE Transactions on Electron Devices, 1973
- Self-pulsing GaAs laser for fiber-dispersion measurementsIEEE Journal of Quantum Electronics, 1972