Spin-Lattice Relaxation of Shallow Donors In Heavily Doped Si
- 1 July 1963
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 18 (7) , 961-969
- https://doi.org/10.1143/jpsj.18.961
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- The theory of impurity conductionAdvances in Physics, 1961
- Impurity Conduction at Low ConcentrationsPhysical Review B, 1960
- Factor and Donor Spin-Lattice Relaxation for Electrons in Germanium and SiliconPhysical Review B, 1960
- Spin-Lattice Relaxation of Shallow Donor States in Ge and Si through a Direct Phonon ProcessPhysical Review B, 1960
- Electron Spin Resonance Experiments on Donors in Silicon. II. Electron Spin Relaxation EffectsPhysical Review B, 1959
- Shallow Impurity States in Silicon and GermaniumPublished by Elsevier ,1957
- Theory of Donor States in SiliconPhysical Review B, 1955
- Deformation Potentials and Mobilities in Non-Polar CrystalsPhysical Review B, 1950