Molecular-beam-epitaxy-grown single-longitudinal-mode GaAs-AlGaAs interferometric lasers on stepped-channelled substrates
- 21 November 1985
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 21 (24) , 1138-1140
- https://doi.org/10.1049/el:19850806
Abstract
The GaAs-AlGaAs double-heterostructure interferometric lasers were successfully grown by molecular beam epitaxy on [011]-oriented-stepped-channelled GaAs(100) substrates. These lasers have a side-mode suppression ratio of greater than 200:1.Keywords
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