Molecular-beam-epitaxy-grown single-longitudinal-mode GaAs-AlGaAs interferometric lasers on stepped-channelled substrates

Abstract
The GaAs-AlGaAs double-heterostructure interferometric lasers were successfully grown by molecular beam epitaxy on [011]-oriented-stepped-channelled GaAs(100) substrates. These lasers have a side-mode suppression ratio of greater than 200:1.

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