44 GHz hybrid HEMT power amplifiers
- 13 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 987-990 vol.3
- https://doi.org/10.1109/mwsym.1989.38888
Abstract
Doped-channel, 0.25- mu m-gate-length, InGaAs pseudomorphic HEMTs (high electron mobility transistors) have been developed which exhibit state-of-the-art power performance at millimeter-wave frequencies, with output power density of 0.93 W/mm and power-added efficiency of 41% at 44 GHz. Using these devices, two Q-band hybrid power amplifiers have been developed. A two-stage design has produced 108 mW output power gain with 9.5 dB and 26.5% power-added efficiency. A three-stage design produced 251 mW output power with 13.6 dB of gain and 26.8% power-added efficiency. The peak efficiency of the three-state amplifier was 31.3% when biased differently. The linear gain of these amplifiers was 12 and 20 dB respectively. It is concluded that these amplifiers are an attractive alternative for designers of future millimeter-wave transmitters.<>Keywords
This publication has 7 references indexed in Scilit:
- A Theory for the Prediction of GaAs FET Load-Pull Power ContoursPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- A 0.15 mu m gate-length pseudomorphic HEMTPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A Q-band monolithic three-stage amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- InGaAs pseudomorphic HEMTs for millimeter wave power applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- The role of inefficient charge modulations in limiting the current-gain cutoff frequency of the MODFETIEEE Transactions on Electron Devices, 1988
- Pulse-doped AlGaAs/InGaAs pseudomorphic MODFETsIEEE Transactions on Electron Devices, 1988
- 44-GHz monolithic GaAs FET amplifierIEEE Electron Device Letters, 1986