Theoretical Model for Analysis and Optimization of Group III-Nitrides Growth by Molecular Beam Epitaxy
- 1 January 1996
- journal article
- Published by Springer Nature in MRS Internet Journal of Nitride Semiconductor Research
Abstract
A theoretical model which accounts for a physisorption precursor of molecular nitrogen is proposed for the analysis of group III-nitride growth by molecular beam epitaxy (MBE). The kinetics of nitrogen evaporation are found to be an essential factor influencing the MBE growth process of group III-nitrides. The high thermal stability of nitrides is explained to be related to the desorption kinetics resulting in a low value of the evaporation coefficient. The values of the evaporation coefficients as functions of temperature are extracted from the experimental Langmuir evaporation data of GaN and AlN. Using the revised thermodynamic properties of the group III-nitrides, and the obtained values of the evaporation coefficient, the process parameter dependent growth rate and transition to extra liquid phase formation during the GaN MBE are calculated. The theoretical results are compared to the available experimental data.Keywords
This publication has 11 references indexed in Scilit:
- Analysis of V-group molecules sticking to III–V compound surfacesSurface Science, 1995
- GaN based III–V nitrides by molecular beam epitaxyJournal of Crystal Growth, 1995
- Epitaxial Growth of GaN on Sapphire (0001) Substrates by Electron Cyclotron Resonance Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1995
- Progress and prospects for GaN and the III–V nitride semiconductorsThin Solid Films, 1993
- Instability of III–V compound surfaces due to liquid phase formationJournal of Crystal Growth, 1993
- Thermodynamic and kinetic processes involved in the growth of epitaxial GaN thin filmsApplied Physics Letters, 1993
- Growth of gallium nitride thin films by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxyJournal of Applied Physics, 1993
- Thermodynamic analysis of molecular beam epitaxy of III–V compounds; Application to the GayIn1−yAs multilayer epitaxyJournal of Crystal Growth, 1990
- Activation Energy for the Sublimation of Gallium NitrideThe Journal of Chemical Physics, 1965
- SUBLIMATION AND DECOMPOSITION STUDIES ON BORON NITRIDE AND ALUMINUM NITRIDE1The Journal of Physical Chemistry, 1962