Interdependence of strain and shape in self-assembled coherent InAs islands on GaAs
- 2 January 1999
- journal article
- Published by IOP Publishing in Europhysics Letters
- Vol. 45 (2) , 222-227
- https://doi.org/10.1209/epl/i1999-00150-y
Abstract
Self-assembled coherent InAs islands on GaAs (100) have been investigated by a novel version of grazing-incidence diffraction ("iso-strain scattering"). This method permits the determination of the interdependence of strain and shape, as well as the relaxation gradient within the InAs dots. The relaxation in the islands ranges from fully strained at the bottom to completely relaxed at the top of the islands. The radius of the dots at a given height depends linearly on the local elastic lattice relaxation, with a rapidly increasing relaxation gradient when approaching the top of the islands.Keywords
This publication has 15 references indexed in Scilit:
- Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: An eight-band studyPhysical Review B, 1997
- Mean-Field Theory of Quantum Dot FormationPhysical Review Letters, 1997
- Molecular Dynamics Study of Coherent Island Energetics, Stresses, and Strains in Highly Strained EpitaxyPhysical Review Letters, 1997
- High-resolution x-ray diffraction from multilayered self-assembled Ge dotsPhysical Review B, 1997
- Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution x-ray diffractionApplied Physics Letters, 1997
- Red-Emitting Semiconductor Quantum Dot LasersScience, 1996
- Structural Transition in Large-Lattice-Mismatch HeteroepitaxyPhysical Review Letters, 1996
- InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structurePhysical Review B, 1995
- Origin of Self-Assembled Quantum Dots in Highly Mismatched HeteroepitaxyPhysical Review Letters, 1995
- Critical layer thickness for self-assembled InAs islands on GaAsPhysical Review B, 1994