Effect of post-deposition annealing on the growth of Cu2ZnSnSe4thin films for a solar cell absorber layer
- 23 July 2008
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 23 (8)
- https://doi.org/10.1088/0268-1242/23/8/085023
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Pulsed laser deposition of quaternary Cu2ZnSnSe4 thin filmsPhysica Status Solidi (a), 2007
- Single step preparation of quaternary thin films by RF magnetron sputtering from binary chalcogenide targetsJournal of Physics and Chemistry of Solids, 2007
- SHORT COMMUNICATION: ACCELERATED PUBLICATION: Diode characteristics in state-of-the-art ZnO/CdS/Cu(In1?xGax)Se2 solar cellsProgress In Photovoltaics, 2005
- Single crystal preparation and crystal structure of the Cu2Zn/Cd,Hg/SnSe4 compoundsJournal of Alloys and Compounds, 2002
- Crystal growth and structure, electrical, and optical characterization of the semiconductor Cu2SnSe3Journal of Applied Physics, 2001
- Thermal analysis and synthesis from the melts of Cu-based quaternary compounds Cu–III–IV–VI4 and Cu2–II–IV–VI4 (II=Zn,Cd; III=Ga,In; IV=Ge,Sn; VI=Se)Journal of Crystal Growth, 2000
- Physical properties of the quarternary chalcogenides Cu2IBIICIVX4 (BII = Zn, Mn, Fe, Co; CIV = Si, Ge, Sn; X = S, Se)Materials Research Bulletin, 1979