Effect of BCl3 Dry Etching on InAlN Surface Properties

Abstract
Dry etched InAlN surfaces have been characterized by atomic force microscopy, current‐voltage measurements, and Auger electron spectroscopy. Electron cyclotron resonance discharges of , or all produce nitrogen deficient surfaces that promote leakage current in rectifying metal contacts, with the producing the least disruption of the InAlN surface properties.

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