SCLC transients in a-Si:H — New features and possibilities
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 137-138, 427-430
- https://doi.org/10.1016/s0022-3093(05)80146-2
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Study of A-Si:H drift mobility in subnanosecond time scaleJournal of Non-Crystalline Solids, 1989
- Carrier lifetimes in amorphous silicon junctions from delayed and interrupted field experimentsPhilosophical Magazine Part B, 1983