Grown-film silicon transistors on sapphire
- 1 January 1964
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 52 (12) , 1487-1490
- https://doi.org/10.1109/proc.1964.3436
Abstract
A method was developed for depositing silicon films by the pyrolytic decomposition of SiH 4 on single crystal sapphire. Electron diffraction and Laue reflection examinations of the films shows single-crystal patterns. The silicon film has a Hall mobility of 135 cm 2 /volt-second at a hole density of 10 17 /cm 3 . Insulated-gate field-effect transistors with a transconductance of 1000 µmho at 5 ma were made with dimensions of 10 µ source-to-drain spacing and an active distance of 120 µ. This value compares favorably with similar units made on bulk silicon and is very encouraging for the possibilities of thin-film silicon devices.Keywords
This publication has 3 references indexed in Scilit:
- Single-Crystal Silicon on a Sapphire SubstrateJournal of Applied Physics, 1964
- The silicon insulated-gate field-effect transistorProceedings of the IEEE, 1963
- Preparation of High-Purity Silicon from SilaneJournal of the Electrochemical Society, 1961