Selective area growth of metal nanostructures
- 15 April 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (16) , 2210-2212
- https://doi.org/10.1063/1.115861
Abstract
Nanometer‐scale metal lines are fabricated onto Si(100) substrates by scanning tunneling microscope (STM) based lithography and subsequent chemical vapor deposition. An STM tip is first used to define areas for metal layer growth by electron stimulated desorption of adsorbed hydrogen. Exposure to Fe(CO)5 at 275 °C results in preferential deposition of Fe onto Si dangling bond sites (i.e., depassivated areas defined by the STM tip), while the monohydride resist remains intact in surrounding areas. Fe metal lines with widths ∼10 nm are constructed using this selective‐area, autocatalytic growth technique.Keywords
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