Hot-carrier-induced deep-level defects from gated-diode measurements on MOSFETs
- 1 February 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (2) , 95-97
- https://doi.org/10.1109/55.46940
Abstract
The reverse-bias current in the gated-diode configuration of hot-carrier degraded MOS devices was measured. It is shown that interface defects created by the degradation contribute predominantly to the generation current. The spatial distribution of the deep-level defects was obtained by means of device simulation.<>Keywords
This publication has 1 reference indexed in Scilit:
- The relationship between Oxide charge and device degradation: A comparative study of n- and p- channel MOSFET'sIEEE Transactions on Electron Devices, 1987