High-efficiency GaP pure green light-emitting diodes of 555 nm fabricated by new liquid phase epitaxy method
- 1 September 1983
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (5) , 490-491
- https://doi.org/10.1063/1.94362
Abstract
A new liquid phase epitaxy (LPE) method, which can control impurity concentration by volatilization of impurities from the growth solution under reduced pressure, has been developed. Using this LPE method, high‐efficiency GaP pure green light‐emitting diodes, of which the peak wavelength is 555 nm, has been obtained. The average efficiency for a epoxy‐encapsulated diode is 0.1% and the maximum efficiency is 0.14% at 16 A/cm2.Keywords
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