Porous silicon host matrix for deposition by atomic layer epitaxy
- 1 April 1997
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 297 (1-2) , 39-42
- https://doi.org/10.1016/s0040-6090(96)09428-x
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Deposition of Tin Oxide into Porous Silicon by Atomic Layer EpitaxyJournal of the Electrochemical Society, 1996
- Growth of gallium oxide thin films from gallium acetylacetonate by atomic layer epitaxyJournal of Materials Chemistry, 1996
- Growth of yttrium oxide thin films from β‐diketonate precursorAdvanced Materials for Optics and Electronics, 1994
- Controlled growth of tin dioxide thin films by atomic layer epitaxyThin Solid Films, 1994