An accurate analysis of noise in rectangular bipolar transistors including current crowding
- 31 May 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (5) , 423-431
- https://doi.org/10.1016/0038-1101(80)90077-5
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Analyse des effets de la défocalisation du courant émetteur sur les mécanismes de conduction et de bruit de fond des transistors à jonctionsPhysica Status Solidi (a), 1975
- General transport theory of noise in pn junction-like devices—I. Three-dimensional Green's function formulationSolid-State Electronics, 1972
- A distributed model of the junction transistor and its application in the prediction of the emitter-base diode characteristic, base impedance, and pulse response of the deviceIEEE Transactions on Electron Devices, 1965
- Theory of noise of transistor-like devicesSolid-State Electronics, 1963
- Noise in Junction TransistorsProceedings of the IRE, 1958
- Matrix Solution of Equations of the Mathieu-Hill TypeJournal of Applied Physics, 1953