High-performance self-aligned p/sup +//n GaAs epitaxial JFET's incorporating AlGaAs etch-stop layer
- 1 June 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (6) , 1529-1531
- https://doi.org/10.1109/16.106249
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Radiation effects in GaAs FET devicesProceedings of the IEEE, 1989
- High frequency divider circuits using ion-implanted GaAs MESFET'sIEEE Electron Device Letters, 1985
- Double-implanted GaAs complementary JFET'sIEEE Electron Device Letters, 1984
- Optical waveguides in GaAs–AlGaAs epitaxial layersJournal of Applied Physics, 1973