Effects of silicide formation on the removal of end-of-range ion implantation damage in silicon
- 1 March 1989
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 39 (1-4) , 297-301
- https://doi.org/10.1016/0168-583x(89)90791-x
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Dopant redistribution in silicide–silicon and silicide–polycrystalline silicon bilayered structuresJournal of Vacuum Science & Technology B, 1987
- Defect annihilation in shallow p+ junctions using titanium silicideApplied Physics Letters, 1987
- Elimination of end-of-range and mask edge lateral damage in Ge+ preamorphized, B+ implanted SiApplied Physics Letters, 1986
- Boron, phosphorus, and arsenic diffusion in TiSi2Journal of Applied Physics, 1986
- Boron, fluorine, and carrier profiles for B and BF2 implants into crystalline and amorphous SiJournal of Applied Physics, 1983