SOI-CMOS 4K SRAM with high dose oxygen implanted substrate

• 1 January 1984
• proceedings article
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• https://doi.org/10.1109/iedm.1984.190820

Abstract

Keywords

• CRYSTALLIZATION
• POWER DISSIPATION
• CIRCUITS
• FABRICATION
• CMOS TECHNOLOGY