A model for the static properties of DH lasers
- 1 August 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 15 (8) , 734-739
- https://doi.org/10.1109/jqe.1979.1070082
Abstract
The various subproblems for DH lasers such as field distribution, carrier profile, and temperature distribution are investigated. Solutions to these problems are obtained either analytically or by precise numerical methods. By combining the subproblems, a detailed model for the static properties is obtained. The model is applicable as well below as above threshold and properties of interest in the application of DH lasers such as threshold current, field distribution at a given current, and light current characteristics can be found. Nonlinear characteristics are found even for ideal symmetrical lasers. These "kinks" are associated with higher order modes and appear at relatively high values of the optical power.Keywords
This publication has 11 references indexed in Scilit:
- Detailed field model for DH stripe lasersOptical and Quantum Electronics, 1978
- Analysis of gain-induced waveguiding in stripe geometry diode lasersIEEE Journal of Quantum Electronics, 1978
- Kinks in the light/current characteristics and near-field shifts in (GaAl)asheterostructure stripe lasers and their explanation by the effect of self focusing on a built-in optical waveguideIEE Journal on Solidstate and Electron Devices, 1978
- Low threshold current proton-isolated (GaAl)As double heterostructure lasersOptical and Quantum Electronics, 1977
- Nonlinearity in power-output–current characteristics of stripe-geometry injection lasersJournal of Applied Physics, 1977
- Waveguiding in a stripe-geometry junction laserIEEE Journal of Quantum Electronics, 1977
- Thermal resistance of heterostructure lasersJournal of Applied Physics, 1975
- Current thresholds in stripe-contact injection lasersSolid-State Electronics, 1973
- Gain-Induced Modes in Planar StructuresBell System Technical Journal, 1973
- Steady-State Junction-Current Distributions in Thin Resistive Films on Semiconductor Junctions (Solutions of ▿2v = ±ev)Journal of Applied Physics, 1970