80 Gbit/s OTDM using electroabsorption modulators
- 8 January 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (1) , 101-103
- https://doi.org/10.1049/el:19980034
Abstract
An 80 Gbit/s (8 × 10 Gbit/s) OTDM system, constructed entirely with electroabsorption modulators (EAM) as the active components, is presented. A tandem EAM pulse source with a simple dual frequency drive generates transform limited 4.5 ps pulses. At the receiver, the 10 Gbit/s channels are demultiplexed from 80 Gbit/s in a single step using a low polarisation sensitivity EAM. Error free operation with a sensitivity of –21.5 dBm is achieved.Keywords
This publication has 9 references indexed in Scilit:
- Polarisation insensitive, 25 dB gain semiconductorlaser amplifier without antireflection coatingsElectronics Letters, 1996
- Single channel 400 Gbit/s time-division-multiplexedtransmission of 0.98 ps pulses over 40 km employingdispersion slope compensationElectronics Letters, 1996
- 1 Tbit/s (100 Gbit/s × 10 channel) OTDM/WDMtransmissionusing a single supercontinuum WDM sourceElectronics Letters, 1996
- 46 Gbit/s multiplexer and 40 Gbit/s demultiplexerIC modules using InAlAs/InGaAs/InP HEMTsElectronics Letters, 1996
- 40 Gbit/s demultiplexing experiment with 10 GHzall-optical clockrecovery using a modelocked semiconductor laserElectronics Letters, 1996
- Discrete electroabsorption modulators with enhanced modulation depthJournal of Lightwave Technology, 1996
- Multiquantum well electroabsorption modulators for80 Gbit/s OTDMsystemsElectronics Letters, 1995
- 40 Gbit/s transmission over 202 km of standard fibreusing midspan spectral inversionElectronics Letters, 1995
- Three-node, 40 Gbit/s OTDM network experiment usingeletro-optic switchesElectronics Letters, 1994