A wide-band push-pull GaAs monolithic active isolator
- 1 February 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 1 (2) , 26-27
- https://doi.org/10.1109/75.80702
Abstract
A 2-6-GHz push-pull GaAs monolithic active isolator has been designed and tested. This balanced MESFET isolator has better than 18-dB reverse isolation of 6 GHz and provides greater than 15-dB input and output return loss across the band. This small (actual chip area 12 mil*24 mil) isolator chip draws 20 mA of current from a single +5-V supply. The compact chip size makes it an ideal candidate for impedance matching for monolithic subsystems in which a ferrite isolator is not practical.<>Keywords
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