Quantum transport in one-dimensional GaAs/AlGaAs microstructures
- 31 December 1988
- journal article
- Published by Elsevier in Surface Science
- Vol. 196 (1-3) , 68-78
- https://doi.org/10.1016/0039-6028(88)90666-8
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Observation of the Aharonov-Bohm effect forτ>1Physical Review Letters, 1987
- Aharonov-Bohm effect in semiconductor microstructuresPhysical Review Letters, 1987
- Experimental determination of the edge depletion width of ahe two-dimensional electron gas in GaAs/AlxGa1−xAsApplied Physics Letters, 1987
- Fabrication of ultrahigh resolution structures in compound semiconductor heterostructuresJournal of Vacuum Science & Technology B, 1987
- Submicron conducting channels defined by shallow mesa etch in GaAs-AlGaAs heterojunctionsApplied Physics Letters, 1986
- Gate-controlled transport in narrow GaAs/As heterostructuresPhysical Review B, 1986
- Magnetic Depopulation of 1D Subbands in a Narrow 2D Electron Gas in a GaAs:AlGaAs HeterojunctionPhysical Review Letters, 1986
- Novel Interference Effects between Parallel Quantum WellsPhysical Review Letters, 1985
- Observation of Aharonov-Bohm Electron Interference Effects with Periodsandin Individual Micron-Size, Normal-Metal RingsPhysical Review Letters, 1985
- Significance of Electromagnetic Potentials in the Quantum TheoryPhysical Review B, 1959