Photoluminescence associated with thermally induced microdefects in Czochralski-grown silicon crystals
- 1 August 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (3) , 270-272
- https://doi.org/10.1063/1.94323
Abstract
Photoluminescence in the photon energy range 0.7–1.2 eV is investigated for commercial Czochralski-grown Si crystals subjected to isothermal annealing at 650 °C for 1–450 h. A strong and sharp line appears at 0.903 eV at certain annealing stages, regardless of the sources and the conductivity type of starting materials. The intensity dependence of the 0.903-eV line on the annealing time coincides with the concentration dependence expected for Si self-interstitials emitted during the oxygen precipitation process. This is experimental evidence that microdefects responsible for this line are correlated with Si self-interstitials.Keywords
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