A new ZnO-on-Si convolver structure
- 1 May 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 3 (5) , 118-120
- https://doi.org/10.1109/EDL.1982.25505
Abstract
A new surface acoustic wave (SAW) convolver has been fabricated on a silicon substrate. The device employs a planar-processed, high-speed DMOS transistor as a mixer to implement the convolution cross terms, utilizing the nonlinear dependence of drain current on gate voltage. The input waveforms are SAW's at 45 MHz, and the interaction path length is 0.9 mm. A value of -29 dbm is obtained for the internal bilinear conversion efficiency Fint.Keywords
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