Reduction of Electron‐Beam‐Induced Damage in MOS Devices Using Three‐Layer Resist with Heavy Metal Interlayer
- 1 June 1984
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 131 (6) , 1391-1395
- https://doi.org/10.1149/1.2115855
Abstract
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